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| Power F-MOS FETs 2SK1478 Silicon N-Channel Power F-MOS FET s Features q Low ON-resistance RDS(on): RDS(on) = 0.4 (typ.) q High-speed switching: tf = 44ns (typ.) q No secondary breakdown q High breakdown voltage, large allowable power dissipation unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 7.50.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 16.70.3 3.10.1 4.0 1.40.1 1.30.2 14.00.5 Solder Dip 0.5 +0.2 -0.1 0.80.1 2.540.25 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25C Ta = 25C Symbol VDSS VGSS ID IDP PD Tch Tstg Ratings 250 20 8 16 40 2 150 -55 to +150 Unit V V A A W C C 5.080.5 1 2 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) 3 s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 200V, VGS = 0 VGS = 20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 5A VDS = 25V, ID = 5A VDS = 10V, VGS = 0, f = 1MHz 2.7 250 1 0.4 4.7 1100 200 60 VGS = 10V, ID = 5A VDD = 100V, RL = 20 72 44 136 5 0.6 min typ max 0.1 1 Unit mA A V V S pF pF pF ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) 1 Power F-MOS FETs ID VDS 16 14 12 10 8 6 4 6V 2 0 0 5 10 15 20 5V 25 30 7V 12 2SK1478 | Yfs | ID Forward transfer admittance |Yfs| (S) RDS(on) ID VDS=10V TC=25C Drain to source ON-resistance RDS(on) () 0.6 VGS=10V TC=25C 0.5 TC=25C 10 Drain current ID (A) VGS=10V 9V 8V 8 0.4 6 0.3 4 0.2 2 0.1 0 0 5 10 15 20 25 0 0 2 4 6 8 10 Drain to source voltage VDS (V) Drain current ID (A) Drain current ID (A) ID VGS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 12 VDS=10V TC=25C 10 10000 Ciss, Coss, Crss VDS 300 f=1MHz TC=25C ton, tf, td(off) ID VDD=100V VGS=10V TC=25C Switching time ton,tf,td(off) (ns) 3000 1000 300 100 30 10 3 1 0 50 100 150 250 Drain current ID (A) Ciss 8 200 td(off) 6 Coss Crss 150 ton tf 4 100 2 50 0 0 2 4 6 8 10 12 200 250 0 0 5 10 15 20 25 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Drain current ID (A) PD Ta 50 Area of safe operation (ASO) 100 Non repetitive pulse TC=25C IDP ID t=100s 1ms Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=2W) 40 30 10 3 30 (1) Drain current ID (A) DC 1 0.3 0.1 0.03 20 100ms 10ms 10 (2) 0 0 20 40 60 80 100 120 140 160 0.01 1 3 10 30 100 300 1000 Ambient temperature Ta (C) Drain to source voltage VDS (V) 2 |
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